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1. product profile 1.1 general description high voltage, high speed, planar passiva ted npn power switching transistor with integrated anti-parallel e-c diode in a sot428 (dpak) surface-mountable plastic package. 1.2 features and benefits ? fast switching ? high voltage capability ? integrated anti-parallel e-c diode ? very low switching and conduction losses 1.3 applications ? dc-to-dc converters ? electronic lighting ballasts ? inverters ? motor control systems 1.4 quick reference data BUJD103AD npn power transistor with integrated diode rev. 3 ? 3 august 2010 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit i c collector current see figure 1 ; see figure 2 ; dc; see figure 4 --4a p tot total power dissipation see figure 3 ; t mb 25c --80w v cesm collector-emitter peak voltage v be =0v --700v static characteristics h fe dc current gain i c =500ma; v ce =5v; see figure 10 ; t j =25c 13 21 32 v ce =5v; i c =3a; t mb = 25 c; see figure 10 -12.5-
BUJD103AD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 3 august 2010 2 of 13 nxp semiconductors BUJD103AD npn power transistor with integrated diode 2. pinning information [1] it is not possible to make a connection to pin 2 of the sot428 (dpak) package 3. ordering information 4. limiting values table 2. pinning information pin symbol description simplified outline graphic symbol 1 b base sot428 (dpak) 2 c collector [1] 3eemitter 3 2 mb 1 sym13 1 c e b table 3. ordering information type number package name description version BUJD103AD dpak plastic single-ended surfac e-mounted package (dpak); 3 leads (one lead cropped) sot428 table 4. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v cesm collector-emitter peak voltage v be = 0 v - 700 v v cbo collector-base voltage i e = 0 a - 700 v v ceo collector-emitter voltage i b = 0 a - 400 v i c collector current dc; see figure 1 ; see figure 2 ; see figure 4 -4a i cm peak collector current see figure 1 ; see figure 2 ; see figure 4 -8a i b base current dc - 2 a i bm peak base current - 4 a p tot total power dissipation t mb 25 c; see figure 3 -80w t stg storage temperature -65 150 c t j junction temperature - 150 c
BUJD103AD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 3 august 2010 3 of 13 nxp semiconductors BUJD103AD npn power transistor with integrated diode fig 1. reverse bias safe operating area fig 2. test circuit for reverse bias safe operating area fig 3. normalized total power dissipation as a function of mounting base temperature v ceclamp (v) 0 1000 800 400 600 200 001aac000 4 6 2 8 10 i c (a) 0 001aab999 dut l c l b i bon v bb v cc v cl(ce) probe point t mb ( c) 0 160 120 40 80 001aab993 40 80 120 p der (%) 0
BUJD103AD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 3 august 2010 4 of 13 nxp semiconductors BUJD103AD npn power transistor with integrated diode 5. thermal characteristics 1) p tot maximum and p tot peak maximum lines 2) second breakdown limits 3) i = region of permissable dc operation ii = extension for repetitive pulse operation iii = extension during turn-on in single transistor converters provided that r be 100 ? and t p 0.6 s fig 4. forward bias safe operating area for t mb 25 c 001aac001 10 ? 1 10 ? 2 10 1 10 2 i c (a) 10 ? 3 v ceclamp (v) 1 10 3 10 2 10 (1) 100 s 200 s i (3) t p = 20 s duty cycle = 0.01 50 s 500 s dc ii (3) iii (3) (2) i cm(max) i c(max) table 5. thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base see figure 6 --1.56k/w r th(j-a) thermal resistance from junction to ambient printed-circuit-board mounted; minimum footprint; see figure 5 -75-k/w
BUJD103AD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 3 august 2010 5 of 13 nxp semiconductors BUJD103AD npn power transistor with integrated diode fig 5. minimum footprint sot428 fig 6. transient thermal impedance from junction to mounting base as a function of pulse width 001aab021 7.0 7.0 4.57 2.5 2.15 1.5 001aab998 t p (s) 10 ? 5 110 10 ? 1 10 ? 2 10 ? 4 10 ? 3 1 10 ? 1 10 z th(j-mb) (k/w) 10 ? 2 = 0.5 0.2 0.1 t p t p t p tot t t = 0.01 0.05 0.02
BUJD103AD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 3 august 2010 6 of 13 nxp semiconductors BUJD103AD npn power transistor with integrated diode 6. characteristics [1] measured with half-sine wave voltage (curve tracer) table 6. characteristics symbol parameter conditions min typ max unit static characteristics i ces collector-emitter cut-off current v be =0v; v ce = 700 v; t j =125c [1] --2ma v be =0v; v ce = 700 v; t j =25c [1] --1ma i cbo collector-base cut-off current v cb =700v; i e =0a [1] --1ma i ceo collector-emitter cut-off current v ce =400v; i b =0a [1] --0.1ma i ebo emitter-base cut-off current v eb =7v; i c =0a --10ma v cesat collector-emitter saturation voltage i c =3a; i b = 0.6 a; see figure 7 ; see figure 8 -0.291v v besat base-emitter saturation voltage i c =3a; i b = 0.6 a; see figure 9 - 0.99 1.5 v v f forward voltage i f =2a; t j = 25 c - 1.04 1.5 v h fe dc current gain i c =1ma; v ce =5v; t mb =25c; see figure 10 10 15 32 i c =500ma; v ce =5v; t j =25c; see figure 10 13 21 32 i c =2a; v ce =5v; t mb =25c; see figure 10 11 16 22 i c =3a; v ce =5v; t mb =25c; see figure 10 - 12.5 - dynamic characteristics t on turn-on time i c =2.5a; i bon = 0.5 a; i boff =-0.5a; r l =75 ? ; t j 25 c; resistive load; see figure 11 ; see figure 12 - 0.52 0.6 s t s storage time i c =2.5a; i bon = 0.5 a; i boff =-0.5a; r l =75 ? ; t j = 25 c; resistive load; see figure 11 ; see figure 12 -2.73.3s i c =2a; i bon = 0.4 a; v bb =-5v; l b =1h; t j = 25 c; inductive load; see figure 13 ; see figure 14 -1.21.4s i c =2a; i bon = 0.4 a; v bb =-5v; l b =1h; t j = 100 c; inductive load; see figure 13 ; see figure 14 --1.8s t f fall time i c =2.5a; i bon = 0.5 a; i boff =-0.5a; r l =75 ? ; t j = 25 c; resistive load; see figure 11 ; see figure 12 - 0.3 0.35 s i c =2a; i bon = 0.4 a; v bb =-5v; l b =1h; t j = 100 c; inductive load; see figure 13 ; see figure 14 --0.12s i c =2a; i bon = 0.4 a; v bb =-5v; l b =1h; t j 25 c; inductive load; see figure 13 ; see figure 14 - 0.03 0.06 s
BUJD103AD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 3 august 2010 7 of 13 nxp semiconductors BUJD103AD npn power transistor with integrated diode fig 7. collector-emitter saturation voltage as a function of base current; typical values fig 8. collector-emitter saturation voltage as a function of co llector current; typical values fig 9. base-emitter saturation voltage as a function of collector current; typical values fig 10. dc current gain as a function of collector current; typical values i b (a) 10 ? 2 10 1 10 ? 1 001aab995 0.8 1.2 0.4 1.6 2.0 v cesat (v) 0 i c = 1 a 2 a 3 a 4 a 001aab997 v cesat (v) i c (a) 10 ? 1 10 1 0.2 0.1 0.3 0.4 0.5 0 001aab996 v besat (v) i c (a) 10 ? 1 10 1 0.6 0.8 0.2 0.4 1.0 1.2 1.4 0 001aab994 i c (a) 10 ? 2 10 1 10 ? 1 10 10 2 h fe 1 v ce = 5 v 1 v t j = 25 c
BUJD103AD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 3 august 2010 8 of 13 nxp semiconductors BUJD103AD npn power transistor with integrated diode fig 11. test circuit for resistive load switching f ig 12. switching times waveforms for resistive load fig 13. test circuit for inductive load switching f ig 14. switching times wave forms for inductive load 001aab98 9 t p r b v im 0 r l dut v cc t 001aab990 i c i b 10 % 10 % 90 % 90 % t on t off t s t f t t i bon ? i boff i con t r 30 ns 001aab991 v cc l c dut l b i bon v bb 001aab992 i c i b 90 % t off i bon t s t f t t ? i boff i con 10 %
BUJD103AD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 3 august 2010 9 of 13 nxp semiconductors BUJD103AD npn power transistor with integrated diode 7. package outline fig 15. package outline sot428 (dpak) references outline version european projection issue date iec jedec jeita sot428 sc-63 to-252 sot42 8 06-02-14 06-03-16 dimensions (mm are the original dimensions) p lastic single-ended surface-mounted package (dpak); 3 leads (one lead cropped) a 2 13 e 1 d 2 d 1 h d l l 1 l 2 e 1 e mounting base wa m b e b 2 b 1 c a 1 y 0 5 10 mm scale unit mm 0.93 0.46 5.46 5.00 0.56 0.20 6.22 5.98 6.73 6.47 10.4 9.6 2.95 2.55 a 1 2.38 2.22 ab 2 1.1 0.9 b 1 e 1 0.89 0.71 bcd 1 0.9 0.5 l 2 ee 2.285 4.57 4.0 d 2 min 4.45 e 1 min 0.5 l 1 min h d lw 0.2 y max 0.2 a
BUJD103AD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 3 august 2010 10 of 13 nxp semiconductors BUJD103AD npn power transistor with integrated diode 8. revision history table 7. revision history document id release date data sheet status change notice supersedes BUJD103AD v.3 20100803 product data sheet - BUJD103AD v.2 modifications: ? various changes to content. BUJD103AD v.2 20091006 product data sheet - BUJD103AD v.1
BUJD103AD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 3 august 2010 11 of 13 nxp semiconductors BUJD103AD npn power transistor with integrated diode 9. legal information 9.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple de vices. the latest product status information is available on the internet at url http://www.nxp.com . 9.2 definitions draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 9.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualific ation this document contains data fr om the preliminary specification. product [short] data sheet production this doc ument contains the product specification.
BUJD103AD all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 3 august 2010 12 of 13 nxp semiconductors BUJD103AD npn power transistor with integrated diode agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any licens e under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulati ons. export might require a prior authorization from national authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive s pecifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 9.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey , greenchip , hipersmart , hitag , i2c-bus logo, icode , i-code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode ? are trademarks of nxp b.v. hd radio and hd radio logo ? are trademarks of ibiquity digital corporation. 10. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BUJD103AD npn power transistor with integrated diode ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 3 august 2010 document identifier: BUJD103AD please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 11. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 general description . . . . . . . . . . . . . . . . . . . . . .1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 9.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 9.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 10 contact information. . . . . . . . . . . . . . . . . . . . . .12

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